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Brand |
D/C |
Package |
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1066 |
FREESCALE |
14+ |
BGA |
| MCIMX6S7CVM08AC |
769 |
FREESCALE |
16+ |
BGA |
| MCP100T-270I/TT |
68000 |
MICROCHIP |
15+ |
SOT23-3 |
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57000 |
MICROCHIP |
16+ |
SOT23-5 |
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58000 |
MICROCHIP |
10+ |
SOT23-3 |
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24000 |
MICROCHIP |
14+ |
SOT-23 |
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6935 |
MICROCHIP |
16+ |
MSOP |
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22350 |
MICROCHIP |
14+ |
SOT23-3 |
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11219 |
MICROCHIP |
16+ |
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17041 |
MICROCHIP |
06+ |
SOT23-3 |
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14911 |
MICROCHIP |
09+ |
SOT-89 |
| MCP1700T-3302E/TT |
87000 |
MICROCHIP |
12+ |
SOT-23 |
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6249 |
MICROCHIP |
16+ |
SOT-23 |
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8308 |
MICROCHIP |
13+ |
SOT-89 |
| MCP1703T-5002E/DB |
6320 |
MICROCHIP |
13+ |
SOT-223 |
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5514 |
MICROCHIP |
16+ |
SOT-223 |
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6845 |
MICROCHIP |
15+ |
SOT223-5 |
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7708 |
MICROCHIP |
13+ |
SOP-8 |
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8974 |
MICROCHIP |
15+ |
SOP-28 |
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7779 |
MICROCHIP |
16+ |
SOP-8 |
| MCP2551T-E/SN |
3957 |
MICROCHIP |
16+ |
SOP-8 |
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5841 |
MICROCHIP |
15+ |
SOP-8 |
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5770 |
MICROCHIP |
15+ |
SOP-8 |
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8740 |
MICROCHIP |
15+ |
DIP |
| MCP3421AOT-E/CH |
12828 |
MICROCHIP |
16+ |
SOT23-6 |
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3875 |
MICROCHIP |
10+ |
SOP-8 |
| MCP3424-E/SL |
8273 |
MICROCHIP |
16+ |
SOP-14 |
| MCP3551-E/SN |
7817 |
MICROCHIP |
16+ |
SOP-8 |
| MCP41050T-I/SN |
4450 |
MICROCHIP |
11+ |
SOP-8 |
| MCP41100-I/SN |
3572 |
MICROCHIP |
15+ |
SOP-8 |
FQP30N06
60V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
Features
• 30A, 60V, RDS(on) = 0.04Ω @VGS = 10 V
• Low gate charge ( typical 19 nC)
• Low Crss ( typical 40 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
Absolute Maximum Ratings TC = 25°C unless otherwise noted
| Symbol |
Parameter |
FQP30N06 |
Units |
| VDSS |
Drain-Source Voltage |
60 |
V |
| ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
|
30 |
A |
| 21.3 |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
120 |
A |
| VGSS |
Gate-Source Voltage |
± 25 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
280 |
mJ |
| IAR |
Avalanche Current (Note 1) |
30 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
7.9 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
7.0 |
V/ns |
| PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C
|
79 |
W |
| 0.53 |
W/°C |
| TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +175 |
°C |
| TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
Product Tags:
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FQP30N06 Power Mosfet Transistor power mosfet ic N-Channel MOSFET Images
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