NDS356AP Power Transistor P-Channel Logic Level Enhancement Mode Field Effect Transistor

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NDS356AP Power Transistor P-Channel Logic Level Enhancement Mode Field Effect Transistor

Name: NDS356AP Power Transistor PChannel Logic Level Enhancement Mode Field Effect Transistor
Brand: FAIRCHILD
Price: 1 USD

Brand Name : FAIRCHILD

Model Number : NDS356AP

Certification : Original Factory Pack

Place of Origin : Philippines

MOQ : 20

Price : Negotiate

Payment Terms : T/T, Western Union,Paypal

Supply Ability : 20000

Delivery Time : 1

Packaging Details : please contact me for details

Description : P-Channel 30 V 1.1A (Ta) 500mW (Ta) Surface Mount SOT-23-3

Drain-Source Voltage : -30 V

Gate-Source Voltage - Continuous : ±20 V

Maximum Drain Current - Continuous ( : ±1.1 A

Maximum Power Dissipation : 0.5 W

Operating and Storage Temperature Range : -55 to 150 °C

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NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

Features

►-1.1 A, -30 V, RDS(ON) = 0.3 W @ VGS=-4.5 V

RDS(ON) = 0.2 W @ VGS=-10 V.

►Industry standard outline SOT-23 surface mount package

using proprietary SuperSOTTM-3 design for superior thermal

and electrical capabilities.

►High density cell design for extremely low RDS(ON).

►Exceptional on-resistance and maximum DC current capability.

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol	Parameter	NDS356AP	Units
VDSS	Drain-Source Voltage	-30	V
VGSS	Gate-Source Voltage - Continuous	±20	V
ID	Maximum Drain Current - Continuous	±1.1	A
PD	Maximum Power Dissipation	0.5	W
TJ ,TSTG	Operating and Storage Temperature Range	-55 to 150	°C

Product Tags:

power mosfet ic

multi emitter transistor

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