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IRF2907ZS-7PPBF Power Mosfet IC Transistor HEXFET® Power MOSFET

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ChongMing Group (HK) Int'l Co., Ltd

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IRF2907ZS-7PPBF Power Mosfet IC Transistor HEXFET® Power MOSFET

Model Number : IRF2907ZS-7PPBF

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 8500pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : N-Channel 75 V 160A (Tc) 300W (Tc) Surface Mount D2PAK (7-Lead)

Pulsed Drain Current : 700 A

Maximum Power Dissipation : 300 W

Linear Derating Factor : 2.0 W/°C

Gate-to-Source Voltage : ± 20 V

Operating Junction and Storage Temperature : -55 to + 175°C

Soldering Temperature, for 10 seconds : 300°C (1.6mm from case )

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IRF2907ZS-7PPbF

HEXFET® Power MOSFET

Features

• Advanced Process Technology

• Ultra Low On-Resistance

• 175°C Operating Temperature

• Fast Switching

• Repetitive Avalanche Allowed up to Tjmax

Description

Specifically designed for high current, high reliability applications, this HEXFET® Power MOSFET utilizes the latest processing techniques and advanced packaging technology to achieve extremely low on-resistance and world -class current ratings. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Server & Telecom OR'ing, Automotive and low voltage Motor Drive Applications.

Absolute Maximum Ratings

	Parameter	Max	Units
I_D @ T_C = 25°C	Continuous Drain Current, V_GS @ 10V (Silicon Limited)	180	A
I_D @ T_C = 100°C	Continuous Drain Current, V_GS@ 10V (See Fig. 9)	120	A
I_D @ T_C = 25°C	Continuous Drain Current, V_GS@ 10V (Package Limited)	160	A
I_DM	Pulsed Drain Current	700	A
P_D @T_C = 25°C	Maximum Power Dissipation	300	W
	Linear Derating Factor	2.0	W/°C
V_GS	Gate-to-Source Voltage	± 20	V
E_AS	Single Pulse Avalanche Energy (Thermally Limited)	160	mJ
E_AS (tested)	Single Pulse Avalanche Energy Tested Value	410	mJ
I_AR	Avalanche Current	See Fig.12a,12b,15,16	A
E_AR	Repetitive Avalanche Energy	See Fig.12a,12b,15,16	mJ
T_{J ,}T_STG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )	°C
	Mounting torque, 6-32 or M3 screw	10 lbf•in (1.1N•m)	°C

Stock Offer (Hot Sell)

Part No.

Quantity

Brand

D/C

Package

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MT29C8G96MAZBBDKD-48 IT	12000	MICRON	NEW	BGA
MT46H64M16LFBF-5 IT:B	10000	MICRON	NEW	BGA
MT46V64M8CY-5B:J	10000	MICRON	NEW	BGA
MT29F1G08ABADAH4-IT:D	20000	MICRON	NEW	BGA
MT41K256M8DA-125:K	4000	MICRON	NEW	BGA
MT46V32M16CY-5B:J	12000	MICRON	NEW	BGA
MT41K64M16TW-107 IT:J	10000	MICRON	NEW	FBGA
MT29F32G08CBACAWP-ITZ:C	10000	MICRON	NEW	TSOP
M25PE16-VMW6TG	50000	MICRON	NEW	SOP8
MT48LC8M16A2P-6A IT:L	20000	MICRON	NEW	TSOP
MT29F128G08CFABBWP-12IT:B	4000	MICRON	NEW	BGA
M25P10-AVMN6TP	50000	MICRON	NEW	SOP8
MT46H64M32LFBQ-48 IT:C	6000	MICRON	NEW	BGA
MT47H64M16NF-25E AIT:M	10000	MICRON	NEW	BGA
MT29F512G08CKECBH7-12:C	1000	MICRON	NEW	BGA
MT46H64M32LFCX-5 IT:B	8000	MICRON	NEW	FBGA
MT29F1G08ABAEAH4:E	20000	MICRON	NEW	BGA
M29W160EB70N6E	30000	MICRON	NEW	TSOP-48
PC28F512P30EFB	4000	MICRON	NEW	BGA
N25Q00AA13GSF40G	4000	MICRON	NEW	SOP
MT29F1G16ABBDAHC-IT:D	14000	MICRON	NEW	BGA
MT29TZZZ8D5JKEZB-107 W:95Q	10000	MICRON	NEW	BGA
MT47H64M16NF-25E:M	30000	MICRON	NEW	BGA
MT40A512M16JY-083E:B	10000	MICRON	NEW	BGA
MT47H64M16NF-25E IT:M	30000	MICRON	NEW	FBGA
MT29E2T08CUHBBM4-3R:B	2000	MICRON	NEW	BGA
MT46V16M16P-5B:M	30000	MICRON	NEW	TSOP

Product Tags:

power mosfet ic

multi emitter transistor

IRF2907ZS-7PPBF Power Mosfet IC Transistor HEXFET® Power MOSFET Images

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